
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
20 mA
Forward Current
10 mA
Power Dissipation (T
M3 Package
280 mW
Storage Temperature
65C to +150C
Lead Temperature
M3 Package
Vapor phase (60 seconds)
+215C
Infrared (15 seconds)
+220C
ESD Susceptibility
2 kV
200V
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Temperature Range
(T
min
≤ T
A
≤ T
max)
Industrial Temperature
Range
40C
≤ T
A
≤ +85C
Extended temperature
Range
40C
≤ T
A
≤ +125C
Reverse Current
LM4050-2.5
60 A to 15 mA
LM4050-4.1
68 A to 15 mA
LM4050-5.0
74 A to 15 mA
LM4050-8.2
91 A to 15 mA
LM4050-10.0
100 A to 15 mA
LM4050-2.5
Electrical Characteristics
Boldface limits apply for T
A =TJ =TMIN to TMAX; all other limits TA =TJ = 25C. The grades A, B and C designate initial
Reverse Breakdown Voltage tolerances of ±0.1%, ±0.2%, and 0.5% respectively.
Symbol
Parameter
Conditions
Typical
LM4050AIM3
LM4050AEM3
Limits
LM4050BIM3
LM4050BEM3
Limits
LM4050CIM3
LM4050CEM3
Limits
Units
(Limit)
VR
Reverse Breakdown Voltage
IR = 100 A
2.500
V
Reverse Breakdown Voltage
IR = 100 A
±2.5
±5.0
±13
mV (max)
Industrial Temp. Range
±11
±14
±21
mV (max)
Extended Temp. Range
±15
±18
±25
mV (max)
IRMIN
Minimum Operating Current
41
A
60
A (max)
65
A (max)
VR/T
Average Reverse Breakdown
Voltage Temperature Coefficient
IR =10 mA
±20
ppm/C
IR =1 mA
±15
ppm/C
IR = 100 A
±15
±50
ppm/C (max)
VR/IR
Reverse Breakdown Voltage
Change with Operating Current
IRMIN ≤ IR ≤ 1 mA
0.3
mV
0.8
mV (max)
1.2
mV (max)
1mA
≤ IR ≤ 15 mA
2.3
mV
6.0
mV (max)
8.0
mV (max)
ZR
Reverse Dynamic Impedance
IR = 1 mA, f = 120 Hz, IAC
= 0.1 IR
0.3
eN
Wideband Noise
IR = 100 A
41
Vrms
10 Hz
≤ f ≤ 10 kHz
VR
Reverse Breakdown Voltage
Long Term Stability
t = 1000 hrs
T = 25C ±0.1C
IR = 100 A
120
ppm
VHYST
Thermal Hysteresis
T = 40C to 125C
0.7
mV
LM4050
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